The commonly used four metrics for write stability were measured and compared based on
the same set of 2048 (2k) six-transistor (6T) static random access memory (SRAM) cells by …

A novel FinFET structure with body spacers in sub fin (BSSF) is proposed to improve the fin
height variation produced in the manufacturing processes. Device simulation results are …

In this paper, we propose a methodology to model the MOSFET subthreshold swing, S
mismatch by using BSIM4 model. The 0.18 μm CMOS technology silicon data show two …

JIMENEZ, A. et al. Analysis of threshold voltage fluctuations due to short channel and
random doping effects. Superf. vacío [online]. 2013, vol. 26, n. 1, pp. 1-3. ISSN 1665-3521 …

Abstract we propose a process and device design strategy for L g= 14 nm Si bulk n/p-
FinFETs based on the effects of process-induced geometry variability on device …

In order to improve electrical characteristics of FinFETs, various annealing treatments for
dopant activation were studied in this work. The treatments including rapid thermal …

In this paper, we propose a non-Monte Carlo corner mismatch model, that enables circuit
designers to simulate the best-case and the worst-case mismatch variation of their circuit …

A comparison between two established MOSFET mismatch modeling approaches, one
based upon the use of uncorrelated random physical variables and one based upon the use …

In this paper we investigated the line edge roughness (LER) effects on the 22-nm and 14-nm
inversion mode (IM) and jounctionless (JL) FinFETs by TCAD simulation. We examined the …

In this paper, a novel adaptable reference circuit is proposed which can be used to calibrate
the switching threshold of a read amplifier. The circuit is based on a network of …