State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik… - Materials science in …, 2018 - Elsevier
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride
Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in
photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is …
photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is …
Room temperature optically detected magnetic resonance of single spins in GaN
High-contrast optically detected magnetic resonance is a valuable property for reading out
the spin of isolated defect colour centres at room temperature. Spin-active single defect …
the spin of isolated defect colour centres at room temperature. Spin-active single defect …
OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs
In this article, we systematically investigate the OFF-state drain-voltage-stress-induced
threshold voltage () instability in Schottky-type p-GaN gate high electron mobility transistors …
threshold voltage () instability in Schottky-type p-GaN gate high electron mobility transistors …
Reverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes
Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples
were fabricated to investigate the effects of the etch-then-regrow process on device …
were fabricated to investigate the effects of the etch-then-regrow process on device …
Mini-LEGO CPU voltage regulator
This article presents the design and optimization of a miniaturized 48-V-to-1-V, 240-A linear-
extendable group operated point-of-load (LEGO-PoL) CPU voltage regulator module (VRM) …
extendable group operated point-of-load (LEGO-PoL) CPU voltage regulator module (VRM) …
Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
Vertical GaN junction barrier Schottky (JBS) diodes with superior electrical characteristics
and nondestructive breakdown were realized using selective-area p-type doping via Mg ion …
and nondestructive breakdown were realized using selective-area p-type doping via Mg ion …
High-voltage p-GaN HEMTs with off-state blocking capability after gate breakdown
In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For
the first time, the preserved OFF-state drain blocking capability has been demonstrated in p …
the first time, the preserved OFF-state drain blocking capability has been demonstrated in p …
Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs
Z Jiang, M Hua, X Huang, L Li, C Wang… - … on Power Electronics, 2021 - ieeexplore.ieee.org
In this article, the impacts of the off-state gate bias (V GS, OFF) on dynamic on-resistance (R
ON) are systematically investigated in commercial Schottky-type p-GaN Gate high-electron …
ON) are systematically investigated in commercial Schottky-type p-GaN Gate high-electron …
VT Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization
R Wang, JM Lei, H Guo, R Li, DJ Chen… - IEEE Electron …, 2021 - ieeexplore.ieee.org
In this work, details of stress time dependent transient shift in p-GaN Gate HEMTs are
captured using a fast sweeping method. A minimum saturated shift () independent of stress …
captured using a fast sweeping method. A minimum saturated shift () independent of stress …