Towards oxide electronics: a roadmap
At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …
experiencing a constant and breathtaking increase of device speed and density, Moore's …
Beyond substrates: strain engineering of ferroelectric membranes
Strain engineering in perovskite oxides provides for dramatic control over material structure,
phase, and properties, but is restricted by the discrete strain states produced by available …
phase, and properties, but is restricted by the discrete strain states produced by available …
Thick BaTiO3 Epitaxial Films Integrated on Si by RF Sputtering for Electro-Optic Modulators in Si Photonics
Thick epitaxial BaTiO3 films ranging from 120 nm to 1 μm were grown by off-axis RF
magnetron sputtering on SrTiO3-templated silicon-on-insulator (SOI) substrates for use in …
magnetron sputtering on SrTiO3-templated silicon-on-insulator (SOI) substrates for use in …
Enhanced ferroelectricity in epitaxial Hf0. 5Zr0. 5O2 thin films integrated with Si (001) using SrTiO3 templates
SrTiO 3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf 0.5 Zr 0.5
O 2 and La 2/3 Sr 1/3 MnO 3 bottom electrodes on Si (001). The Hf 0.5 Zr 0.5 O 2 films show …
O 2 and La 2/3 Sr 1/3 MnO 3 bottom electrodes on Si (001). The Hf 0.5 Zr 0.5 O 2 films show …
High energy storage properties of calcium-doped barium titanate thin films with high breakdown field strength
T Zhao, Y Ye, K Guo, R Cui, M Zhang, X Wang… - Journal of Alloys and …, 2024 - Elsevier
Abstract Barium titanate (BaTiO 3; BTO) has excellent energy storage properties; however,
the breakdown field strength of BTO thin films must be improved for high energy storage. In …
the breakdown field strength of BTO thin films must be improved for high energy storage. In …
Sm-doping driven state-phase transition and energy storage capability in lead-free Ba (Zr0. 35Ti0. 65) O3 films
The stability of high energy-storage performance dielectric-film capacitors with respect to
frequency, temperature, and cycle number is very essential for developing energy-storage …
frequency, temperature, and cycle number is very essential for developing energy-storage …
Ferroelectric domain architecture and poling of on Si
We investigate the ferroelectric domain architecture and its operando response to an
external electric field in BaTiO 3-based electro-optic heterostructures integrated on silicon …
external electric field in BaTiO 3-based electro-optic heterostructures integrated on silicon …
[HTML][HTML] A transversal approach to predict surface charge compensation in piezoelectric force microscopy
Piezoelectric force microscopy (PFM) has demonstrated to be a powerful tool to characterize
ferroelectric materials. However, extrinsic effects, most notably, those resulting from surface …
ferroelectric materials. However, extrinsic effects, most notably, those resulting from surface …
Heterogeneous Integration of High Endurance Ferroelectric and Piezoelectric Epitaxial BaTiO3 Devices on Si
Integrating epitaxial BaTiO3 (BTO) with Si is essential for leveraging its ferroelectric,
piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous …
piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous …
Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)
Ferroelectric BaTiO3 films with large polarization have been integrated with Si (001) by
pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate …
pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate …