We demonstrate the controlled incorporation of P dopant atoms in Si (001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study …
Using density functional theory and guided by extensive scanning tunneling microscopy (STM) image data, we formulate a detailed mechanism for the dissociation of phosphine (PH …
It was recently shown that low-coverage PH 3 dosing of the Si (001) surface is fully dissociative at room temperature with PH 2+ H, PH+ 2 H, and P+ 3 H as intermediate …
Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH 3) dosing of the Si (001) surface. On the basis of a …
We report a comprehensive ab initio survey of possible dissociation intermediates of phosphine (PH 3) on the Si (001) surface. We assign three scanning tunneling microscopy …
Clean, As-and P-terminated Si (100) surfaces were prepared with H2 carrier gas and AsH3 and PH3 as precursors in an MOCVD chamber. Reflectance difference spectra (RDS) were …
A detailed atomic-resolution scanning tunneling microscopy (STM) and density functional theory study of the adsorption, dissociation, and surface diffusion of phosphine (PH3) on Si …
JM Bennett, O Warschkow, NA Marks… - Physical Review B …, 2009 - APS
Using density-functional theory and a combination of growing string and dimer method transition state searches, we investigate the interaction of phosphorus atoms with the silicon …
Using a first-principles pseudopotential method we have compared the interaction processes involved in the adsorption of ethylene on the silicon and germanium surfaces. We …