MBE growth optimization of InAs (001) homoepitaxy
The optimal conditions for growth of homoepitaxial InAs layers by molecular beam epitaxy
were investigated over a wide range of substrate temperatures and As 2/In flux ratios at a …
were investigated over a wide range of substrate temperatures and As 2/In flux ratios at a …
Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux
EJ Koerperick, LM Murray, DT Norton, TF Boggess… - Journal of crystal …, 2010 - Elsevier
Growth optimization of unintentionally doped GaSb buffer layers on (100) GaSb substrates
by molecular beam epitaxy is reported. Several growth parameters were varied to determine …
by molecular beam epitaxy is reported. Several growth parameters were varied to determine …
[图书][B] High power mid-wave and long-wave infrared superlattice light emitting diodes: Device growth and applications
EJ Koerperick - 2009 - search.proquest.com
High brightness light emitting diodes based on the InAs/GaSb superlattice material system
have been developed for use in mid-wave and long-wave infrared opto-electronic systems …
have been developed for use in mid-wave and long-wave infrared opto-electronic systems …
Dependence of cathodoluminescence on layer resistance applied for measurement of thin‐layer sheet resistance
A Czerwinski, M Pluska, J Ratajczak… - Journal of …, 2010 - Wiley Online Library
The dependence of spatially and spectrally resolved cathodoluminescence in a scanning
electron microscope on resistances in semiconductor structures, especially on the layer …
electron microscope on resistances in semiconductor structures, especially on the layer …
[PDF][PDF] Kuantum nokta ara bant oluşumlu güneş hücresinin büyütülmesi, fabrikasyonu ve karakterizasyonu
U Serincan, HK Mutlu, M Kulakçı - Politeknik Dergisi, 2017 - dergipark.org.tr
Katmanlar arasında sıkıştırılmış kendinden oluşumlu InAs kuantum noktalar n-üzeri p-GaAs
tek eklem güneş hücresinin taban kısmına yakın bir bölgesinde sentezlenmiştir. Güneş …
tek eklem güneş hücresinin taban kısmına yakın bir bölgesinde sentezlenmiştir. Güneş …
[PDF][PDF] Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices
H Ye - 2016 - core.ac.uk
Molecular Beam Epitaxy (MBE) is a powerful technique that is used for layerby-layer growth
of semiconductors, metals and insulators. Compared to other epitaxial growth techniques …
of semiconductors, metals and insulators. Compared to other epitaxial growth techniques …
Department of Materials and Semiconductor Structures Research
A Czerwiński - Prace Instytutu Technologii Elektronowej, 2011 - yadda.icm.edu.pl
Department of Materials and Semiconductor Structures Research - Prace Instytutu
Technologii Elektronowej - Tom z. 1/2 (2011) - BazTech - Yadda PL | EN Szukaj Przeglądaj …
Technologii Elektronowej - Tom z. 1/2 (2011) - BazTech - Yadda PL | EN Szukaj Przeglądaj …
[引用][C] Department of Photonics
M Bugajski - Prace Instytutu Technologii Elektronowej, 2012