Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …

Atomic layer deposition (ALD) has been traditionally regarded as an extremely powerful but
slow thin-film deposition technique. The (perceived) limitation in terms of deposition rate has …

The development of stable Janus architectures suitable for biphasic applications holds
significant importance. A novel approach is introduced for interfacial supramolecular self …

Memristor got a significant attraction to be the next generation memory device due to its
small size, simple architecture, high density, and low power consumption. A memristor is a …

A high throughput mass production of separator is proposed using a well‐established
unique in‐house process of roll‐to‐roll atmospheric atomic layer deposition. An ultra‐thin …

Tungsten disulfide (WS 2) is a transition metal dichalcogenide that differs from other 2D
materials such as graphene owing to its distinctive semiconducting nature and tunable band …

Graphene quantum dots (GQD) with diameters as small as∼ 2 nm were synthesized by an
efficient chemo-mechanical technique. This involved mortar grinding and ultra-sonication as …

Pursuit of the most appropriate materials and fabrication methods is essential for developing
a reliable, rewritable and flexible memory device. In this study, we have proposed an …

In conventional atomic layer deposition (ALD), precursors are exposed sequentially to a
substrate through short pulses while kept physically separated by intermediate purge steps …

A multilayer separator is developed by the deposition of ultrathin polyvinylidene fluoride
(PVDF) and aluminum oxide (Al 2 O 3) layers on polyolefin separator using in-house …