Ferroelectric domain walls are a completely new type of functional interface, which have the
potential to revolutionize nanotechnology. In addition to the emergent phenomena at …

The effects of laser wavelength (355 nm and 532 nm) and laser pulse energy on the
quantitative analysis of LiFePO 4 by atom probe tomography are considered. A systematic …

Silicon nanocrystals (SiNCs) embedded in a silicon oxide matrix were studied by 3D atom
probe tomography (APT). The distribution of the SiNC diameter was found to have a mean …

Disordered materials with new optical properties are capturing the interest of the scientific
community due to the observation of innovative phenomena. We present the realization of …

High-temperature anneals of nonstoichiometric Si oxide (SiOx, x< 2) films induce phase
separation in them, with the formation of composite structures containing amorphous or …

This paper describes initial experimental results from an extreme ultraviolet (EUV) radiation-
pulsed atom probe microscope. Femtosecond-pulsed coherent EUV radiation of 29.6 nm …

In this work, the optimal conditions for the electrodeposition of a CdSe film on n-Si were
demonstrated. The structural and optical properties of the bare films and after annealing …

Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials.
For porous Si, the long-standing failure to govern the clustering has been attributed to …

In this study, we report on the evolution of the microstructure and photoluminescence
properties of Pr 3+-doped hafnium silicate thin films as a function of annealing temperature …

Porous silicon (Psi) has recently attracted considerable attention because of its unique
optical and structural properties and capacity to be used in various applications. Due to the …