Compute in‐memory with non‐volatile elements for neural networks: A review from a co‐design perspective

W Haensch, A Raghunathan, K Roy… - Advanced …, 2023 - Wiley Online Library
Deep learning has become ubiquitous, touching daily lives across the globe. Today,
traditional computer architectures are stressed to their limits in efficiently executing the …

Investigating the origins of ultra-short relaxation times of silver filaments in forming-free SiO2-based conductive bridge memristors

P Bousoulas, D Sakellaropoulos… - …, 2020 - iopscience.iop.org
The threshold switching effect is considered of outmost importance for a variety of
applications ranging from the reliable operation of crossbar architectures to emulating …

Low Power Stochastic Neurons From SiO2-Based Bilayer Conductive Bridge Memristors for Probabilistic Spiking Neural Network Applications—Part I: Experimental …

P Bousoulas, C Tsioustas, J Hadfield… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The development of low-power neurons with an intrinsic degree of stochasticity is
considered quite important for the emulation of the respective probabilistic procedures that …

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

M Chauhan, S Choudhary… - Advanced Electronic …, 2024 - Wiley Online Library
Resistive random‐access memories (ReRAM) are promising candidates for next‐generation
non‐volatile memory, logic components, and bioinspired neuromorphic computing …

Tuning the analog synaptic properties of forming free SiO2 memristors by material engineering

P Bousoulas, D Sakellaropoulos… - Applied Physics Letters, 2021 - pubs.aip.org
The development of alternative brain-inspired neuromorphic computing architectures is
anticipated to play a key role in addressing the strict requirements of the artificial intelligence …

Impact of Active Electrode on the Synaptic Properties of SiO2-Based Forming-Free Conductive Bridge Memory

D Sakellaropoulos, P Bousoulas… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The influence of active top electrode (TE) material is thoroughly investigated in order to shed
light into the manifestation of various switching modes and the concomitant repercussion on …

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

P Bousoulas, C Papakonstantinopoulos, S Kitsios… - Micromachines, 2021 - mdpi.com
The quick growth of information technology has necessitated the need for developing novel
electronic devices capable of performing novel neuromorphic computations with low power …

Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects

YR Jeon, D Akinwande, C Choi - Nanoscale Horizons, 2024 - pubs.rsc.org
We investigated diffusion memristors in the structure of Ag/Ta2O5/HfO2/Pt, in which active
Ag ions control active metal ion diffusion and mimic biological brain functions. The CMOS …

Demonstration of Enhanced Switching Variability and Conductance Quantization Properties in a SiO2 Conducting Bridge Resistive Memory with Embedded Two-Dimensional …

S Kitsios, P Bousoulas, D Spithouris… - ACS Applied …, 2022 - ACS Publications
In this work, we explore the resistive switching behavior of a thin layer of SiO2 with
embedded two-dimensional (2D) molybdenum disulfide, MoS2, in a conductive bridge …

Highly Flexible Artificial Synapses from SiO2-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

C Papakonstantinopoulos, P Bousoulas… - ACS Applied …, 2021 - ACS Publications
The growth of flexible memory devices with intrinsic neuromorphic properties is attracting
tremendous attention due to the wide spread of wearable electronics. The fabrication of …