Abstract 2D phosphorene, arsenene, antimonene, and bismuthene, as a fast‐growing family
of 2D monoelemental materials, have attracted enormous interest in the scientific community …

Spin–orbit torque switching using the spin Hall effect in heavy metals and topological
insulators has a great potential for ultralow power magnetoresistive random-access memory …

The constant drive to replace rare-earth metal magnets has initiated great interest in an
alternative. Manganese (Mn) has emerged to be a potential candidate as a key element in …

The control of magnetization by electric current is a rapidly developing area motivated by a
strong synergy between breakthrough basic research discoveries and industrial applications …

Magnetic tunnel junctions (MTJs) exhibit a great profusion of unique functional properties,
such as nonvolatility, scalability, high endurance, and low power consumption. For this …

Increasing the efficiency of spin–orbit torque (SOT) is of great interest in spintronics devices
because of its application to the non-volatile magnetic random access memory and in-logic …

Magnetization switching induced by spin–orbit torque is of fundamental interest for
developing spintronic devices with low-power consumption and nonvolatility. Here, we …

The indirect interlayer exchange coupling (IEC) between two magnetic layers holds
significant importance in the field of spintronics and has been widely used in the …

Room temperature growth of textured polycrystalline films of MnGa alloys using a CoGa
buffer layer on a thermally oxidized Si substrate is demonstrated. MnGa thin films with a …

Perpendicular magnetic tunnel junctions (p-MTJs) with a MgO barrier and a 1-nm-thick
MnGa electrode were investigated by inserting several monolayers (MLs) of Mn. The tunnel …