We investigate the transition of the conduction mechanism from band and nearest-neighbor
hopping (NNH) conduction to variable-range hopping (VRH) conduction in heavily Al-doped …

To reduce the resistivity of heavily Al-doped 4H-SiC epilayers, the conduction mechanisms
were investigated for Al concentrations (C Al) between 2.4× 10 19 and 4.7× 10 20 cm− 3 and …

Experimental data obtained from temperature-dependent Hall-effect measurements on Al-
doped p-type 4H-SiC samples, which exhibit an anomalous sign reversal of the Hall …

The hole transport properties of heavily doped 4H-SiC (Al) layers with Al implanted
concentrations of 3× 10 20 and 5× 10 20 cm− 3 and annealed in the temperature range …

In the case of Al+ implanted 4H-SiC, a post implantation annealing temperature of 1950 C
has the beneficial effect of maximizing both the electrical activation of implanted Al and the …

To outline the hopping conduction range, the electrical characteristics of CVD-grown heavily
Al-doped 4H-SiC thick epilayers (2.0× 10 19–4.0× 10 20 cm− 3) were investigated in a wide …

We investigate the temperature-dependent resistivity (ρ (T)) and Hall coefficient (RH (T)) of
heavily Al-doped 4H-SiC and discuss the underlying conduction mechanisms. The sign of …

The deep-level drain current transient spectroscopy (Id-DLTS) measurements of Al-doped
SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) strongly suggest that the …

At low temperatures, the Hall coefficients in heavily Al-doped 4H-SiC are reported to be
negative in the band conduction region as well as in the hopping conduction regions (ie …

Previous studies have shown that the electrical activation of a given implanted Al
concentration in 4H-SiC increases with the increasing of the post implantation annealing …