Data storage: review of Heusler compounds

Z Bai, LEI Shen, G Han, YP Feng - Spin, 2012 - World Scientific
In the recent decade, the family of Heusler compounds has attracted tremendous scientific
and technological interest in the field of spintronics. This is essentially due to their …

Perpendicularly Magnetized MnxGa‐Based Magnetic Tunnel Junctions: Materials, Mechanisms, Performances, and Potential Applications

X Zhao, J Zhao - Advanced Materials Interfaces, 2022 - Wiley Online Library
Magnetic tunnel junctions (MTJs) exhibit a great profusion of unique functional properties,
such as nonvolatility, scalability, high endurance, and low power consumption. For this …

Roadmap for emerging materials for spintronic device applications

A Hirohata, H Sukegawa, H Yanagihara… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
The Technical Committee of the IEEE Magnetics Society has selected seven research topics
to develop their roadmaps, where major developments should be listed alongside expected …

Anomalous Nernst effect in L10-FePt/MnGa thermopiles for new thermoelectric applications

Y Sakuraba, K Hasegawa, M Mizuguchi… - Applied physics …, 2013 - iopscience.iop.org
We propose a new-type of thermopile consisting of two ferromagnetic materials with
anomalous Nernst effects (ANEs) of opposite signs. L1 0-FePt and L1 0-MnGa have been …

Composition dependence of magnetic properties in perpendicularly magnetized epitaxial thin films of Mn-Ga alloys

S Mizukami, T Kubota, F Wu, X Zhang, T Miyazaki… - Physical Review B …, 2012 - APS
Mn-Ga binary alloys show strong magnetism and large uniaxial magnetic anisotropy even
though these alloys do not contain any noble, rare-earth metals or magnetic elements. We …

Magnetoresistance effect in L1-MnGa/MgO/CoFeB perpendicular magnetic tunnel junctions with Co interlayer

QL Ma, T Kubota, S Mizukami, XM Zhang… - Applied Physics …, 2012 - pubs.aip.org
The fully perpendicular magnetic tunnel junctions (p-MTJs) based on L1 0-MnGa and thin
CoFeB electrodes with MgO barrier were reported in this letter. A thin Co layer was …

High perpendicular magnetic anisotropy in D22-Mn3+ xGe tetragonal Heusler alloy films

A Sugihara, S Mizukami, Y Yamada, K Koike… - Applied Physics …, 2014 - pubs.aip.org
We prepared D0 22-Mn 3+ x Ge (− 0.67≤ x≤ 0.35) epitaxial thin films on MgO (001)
substrates with Cr (001) buffer layers and systematically investigated the dependence of …

Perpendicularly magnetized Mn x Ga films: promising materials for future spintronic devices, magnetic recording and permanent magnets

L Zhu, J Zhao - Applied Physics A, 2013 - Springer
In this article, we review the recent progress in synthesis, characterization and related
spintronic devices of tetragonal Mn x Ga alloys with L 1 0 or D 0 22 ordering. After a brief …

Spintronics technology and device development

Y Ando - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Spintronics is an emerging field of research that has made great advances in the last two
decades. During this period, various new outstanding spintronics-related phenomena and …

MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers

S Mao, J Lu, X Zhao, X Wang, D Wei, J Liu, J Xia… - Scientific Reports, 2017 - nature.com
Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant
perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin …