Our ability to shape and finish a component by combined methods of fabrication including
(but not limited to) subtractive, additive, and/or no theoretical mass-loss/addition during the …

Ta barrier layers are commonly used in microelectronic devices to prevent direct Cu-Si
contact. To better understand the deposition mechanism of Cu seed layers on Ta barriers …

Abstract Zinc Tin Germanium Nitride (ZnSn x Ge 1-x N 2) alloys, which consist of the ternary
nitrides ZnSnN 2 and ZnGeN 2, are notable for being earth-abundant materials that offer …

Aluminum gallium nitride (AlGaN) is a nanohybrid semiconductor material with a wide
bandgap, high electron mobility, and high thermal stability for various applications including …

The influences of indium doping on dynamics of< a>-prismatic edge dislocation along
shuffle plane in wurtzite GaN have been investigated employing classical molecular …

In this work, we investigated the deposition of AlN film on GaN substrate by using molecular
dynamics (MD) simulations. The effects of GaN substrate surface, growth temperature, and …

The growth of AlGaN has been extensively studied, but corresponding research related to
the effect of AlN substrate surface has rarely been reported in literature. In this article, the …

Exploring interfacial thermal transport of a heterojunction interface is crucial to achieving
advanced thermal management for gallium nitride-based high electron mobility transistor …

The presence of threading dislocations in the depletion region of Hg1–x Cd x Te detectors
remains a problem due to its negative impact on the electrical and electronic properties of …

Due to the lack of appropriate experimental methods for imaging the evolution of the
microstructure of materials at the growth conditions, our understanding of the physical …