Wind energy is vital for transitioning to renewable sources, reducing reliance on fossil fuels,
and mitigating climate change. Harnessing wind power provides sustainable solutions to …

In this study, the gate electrode work function engineered Junctionless Accumulation Mode
Gate Stack Gate All Around (JAM-GS-GAA) FinFET has been rigorously investigated for …

This paper explores the efficacy of Gallium Arsenide (GaAs) as a fin material on the analog
metrics and parasitic capacitances of Gate Stack Gate-All-Around (GS-GAA) FinFET …

The efficiency of the integrated circuit (IC) as the reliability, speed, high production costs,
and power consumption will be reduced by the nanometric size of the MOSFET transistor …

In this paper, a T gate head AlGaN/GaN high-electron-mobility transistor (HEMT) on BGO
substrate is proposed and optimization is done for channel length, gate length and gate …

This work investigates a Gate-Stacked negative capacitance field-effect transistor with a high
dielectric material layer in the substrate region (GS-NCFET). Also, the effect of different types …

Shrinking MOSFETs suffer performance hits due to short-channel effects and leakage.
Junctionless transistors JLTs emerge as promising alternatives due to simpler fabrication …

Execution grids of developing electronic devices are being examined to find substitutes for
MOSFETs in the quest to minimize power dissipation and ease energy efficiency limitations …

This paper reports the Cd 0.2 Zn 0.8 O channel cylindrical gate-all-around nanowire thin-film
transistor (CY-GAA-NWTFT) for high-speed active-matrix liquid crystal display (AMLCD) …

Abstract In this report, Density Functional Theory (DFT) based calculation using a Quantum
Atomistic Tool Kit (ATK) simulator is done for the hafnia-based ferroelectric material. The …