The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …

Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …

Since the continuous scaling down of the transistor channel length, extraordinary
improvement is achieved in the switching speed. However, the rising leakage current …

The nano ribbon FET (NR-FET) is an emerging device as multigate structure can be
designed on a single substrate, which leads to improvement in device performance …

This paper proposes a novel technique based on dual-material source gate (DMSG) design
to enhance the performance of a junctionless carbon nanotube tunneling field-effect …

In this article, a new gate-all-around (GAA) pn carbon nanotube TFET (CNT-TFET) is
proposed and compared with its conventional counterpart. The nonequilibrium Green's …

This paper proposes a new structure for tunnel field effect transistor on a selective buried
oxide (SELBOX) substrate. An extensive simulation study and a comparative performance …

Through the age of nanoelectronics, device dimensions are curbed, and the size of
transistors is rapidly reduced. Scaling down transistors results in high-speed switching …

In this paper, a charge plasma-based monolayer transition metal dichalcogenide (TMD)
tunneling field-effect transistor (TFET) is investigated by solving self-consistent 3-D Poisson …

Steep-slope switching is effective to reduce the required energy for switching, however, at
least 60 mV of gate voltage is required to modulate the current by an order of magnitude at …