Over the past decade, advances in LEDs have enabled the potential for wide-scale
replacement of traditional lighting with solid-state light sources. If LED performance targets …

This article reviews the development of nonpolar and semipolar InGaN/GaN light-emitting
diodes (LEDs), emphasizing structures on freestanding bulk GaN. A brief history of LED …

The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …

A PDRMIP Multimodel Study on the Impacts of Regional Aerosol Forcings on Global and
Regional Precipitation in: Journal of Climate Volume 31 Issue 11 (2018) Jump to Content …

Thin films of III–V compound semiconductors such as GaAs and InP can be grown on native
substrates, whereas such growth was difficult for group III nitride semiconductors. Despite …

Recent advances in the research, development, and commercial production of native GaN
substrates with low defect density and high structural and optical quality have attracted a …

The quest to use nonpolar surfaces of nitride materials and devices started a few years ago
with the aim to avoid the strong internal electric fields in active regions of optoelec‐tronic …

The remarkable progress in nonpolar and semipolar devices based on gallium nitride (GaN)
in recent years has been driven by not only advancements in the epitaxial growth technique …

High‐efficiency green‐yellow InGaN‐based light‐emitting diodes (LEDs) were grown by
metal organic chemical vapor deposition on conventional c‐plane sapphire (0001) …

Large gallium nitride (GaN) crystals were grown using a hydride vapor phase epitaxy
(HVPE) technique and were processed into substrates for device applications. Polishing …