Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing
PR Chidambaram, C Bowen… - … on Electron Devices, 2006 - ieeexplore.ieee.org
Semiconductor industry has increasingly resorted to strain as a means of realizing the
required node-to-node transistor performance improvements. Straining silicon …
required node-to-node transistor performance improvements. Straining silicon …
[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
[图书][B] ESD: physics and devices
SH Voldman - 2004 - books.google.com
This volume is the first in a series of three books addressing Electrostatic Discharge (ESD)
physics, devices, circuits and design across the full range of integrated circuit technologies …
physics, devices, circuits and design across the full range of integrated circuit technologies …
Pressure and stress effects on the diffusion of B and Sb in Si and Si-Ge alloys
MJ Aziz, Y Zhao, HJ Gossmann, S Mitha, SP Smith… - Physical Review B …, 2006 - APS
The hydrostatic pressure dependence of the diffusivity of B and Sb in Si and of B in Si 89 Ge
11 has been measured. The diffusivity of Sb in Si is retarded by pressure, characterized by …
11 has been measured. The diffusivity of Sb in Si is retarded by pressure, characterized by …
Modeling the impact of stress on silicon processes and devices
V Moroz, N Strecker, X Xu, L Smith, I Bork - Materials Science in …, 2003 - Elsevier
This paper discusses different aspects of modeling the impact of stress on silicon processes
and devices. The models account for the stresses due to the thermal mismatch during the …
and devices. The models account for the stresses due to the thermal mismatch during the …
Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET
Y Morita, K Fukuda, T Mori… - Japanese Journal of …, 2016 - iopscience.iop.org
A novel tunnel FinFET equipped with a SiGe/Si heterojunction and a multilayer fin-channel
has been experimentally demonstrated. A high-quality SiGe layer is epitaxially grown on a …
has been experimentally demonstrated. A high-quality SiGe layer is epitaxially grown on a …
Diffusion in semiconductors
D Shaw - Springer Handbook of Electronic and Photonic …, 2017 - Springer
Atomic diffusion in semiconductors refers to the migration of atoms, including host, dopant
and impurities. Diffusion occurs in all thermodynamic phases, but the solid phase is the most …
and impurities. Diffusion occurs in all thermodynamic phases, but the solid phase is the most …
Minimization of material inter-diffusion for thermally stable quaternary-capped InAs quantum dot via strain modification
In this study, a theoretical model is developed for investigating the effect of thermal
annealing on a single-layer quaternary-capped (In 0.21 Al 0.21 Ga 0.58 As) InAs quantum …
annealing on a single-layer quaternary-capped (In 0.21 Al 0.21 Ga 0.58 As) InAs quantum …
Unipolar behavior of asymmetrically doped strained Si0. 5Ge0. 5 tunneling field-effect transistors
M Schmidt, RA Minamisawa, S Richter… - Applied Physics …, 2012 - pubs.aip.org
We investigate here the impact of the dopant concentration in the source and drain regions
on the ambipolar behavior of band-to-band tunneling field-effect transistors with …
on the ambipolar behavior of band-to-band tunneling field-effect transistors with …
Bulk Silicon Crystals with the High Boron Content, Si1–xBx: Two Semiconductors Form an Unusual Metal
SV Ovsyannikov, H Gou, AE Karkin… - Chemistry of …, 2014 - ACS Publications
Silicon is a key technological material, and its controlled doping is one of the simple and
effective ways which are applied for creation of new advanced materials with tunable …
effective ways which are applied for creation of new advanced materials with tunable …