Optoelectrical and microelectronic devices involving gallium nitride have become a
challenge but their development is limited because of a lack of suitable substrates. This …

We present a review of the current status of research into new semiconductor materials for
use as particle tracking detectors in very high radiation environments. This work is carried …

(57) ABSTRACT A GaN crystal having up to about 5 mole percent of at least one of
aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having …

As a typical representative of the third-generation semiconductor materials, GaN is an ideal
substrate for the fabrication of blue-green lasers, RF microwave devices, and power …

There is provided a GaN single crystal at least about 2 millimeters in diameter, with a
dislocation density less than about 10 4 cm− 1, and having no tilt boundaries. A method of …

Blue and near-ultraviolet (UV) InGaN/GaN multiple-quantum-well light-emitting diodes
(LEDs) with peak emission at 465 nm and 405 nm, respectively, were grown on GaN and …

EP O 937 790 8, 1999 EP O966047 12/1999 EP 1 172 464 1, 2002 EP 1249 522 10, 2002
FR 2796 657 1, 2001 JP 11 171699 9, 1999 JP 200022212 A 1, 2000 WO WO96, 41906 …

GaN PiN rectifiers with high structural quality were grown on free-standing GaN substrates
using metalorganic chemical vapor deposition. The lattice mismatch between the substrate …

The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN
growth techniques. Defect characterization of the GaN substrates by conventional methods …

(57) ABSTRACT A crystalline composition is provided. The crystalline com position may
include gallium and nitrogen; and the crystal line composition may have an infrared …