Because of the global trends of energy demand increase and decarbonization, developing
green energy sources and increasing energy conversion efficiency are recently two of the …

Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high
electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor …

With the development of high-frequency, miniaturized, and lightweight power electronic
devices, third-generation semiconductor devices are more and more used in the main …

With the increase in renewable energy generation, microgrid has put forward higher
requirements on the power density and performance of the photovoltaic inverter. In this …

Gallium nitride is becoming more popular in low-voltage applications. Gallium nitride (GaN)
high electron mobility transistors (HEMTs) has positive temperature feature. It makes parallel …

In this article, an optimum ferrite beads design method is proposed to suppress the self-
sustained turn-off oscillation of cascode gallium nitride high-electron-mobility transistors …

Due to the excellent reverse recovery characteristics, gallium nitride high electron mobility
transistor (GaN HEMT) is the ideal device for totem-pole bridgeless PFC circuits. However …

In this paper are presented results of mutual comparison of the switching waveforms and
energy losses, recorded during the turn-on and turn-off switching transients in GaN HEMTs …

High electron mobility transistors (HEMT) have a growing application in the modern power
converters. Gallium nitride (GaN) field effect transistors (FET) are particularly promising …

UPRAVLJANJE MEKIM PREKIDANJEM KOD DVOSMERNOG BUCK/BOOST
PRETVARAČA ZASNOVANO NA ELEMENTU SA STRUJNO REGULISANIM …