Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …

We report on the demonstration of a new type of axial nanowire LED heterostructures, with
the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large …

Correlated atom probe tomography, cross-sectional scanning transmission electron
microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN …

In the past few years, tremendous progress has been demonstrated on epitaxial growth and
processing of group III nitride nano‐and microrods (NAMs). This has also enabled the …

The role of Si during the metal–organic vapor phase epitaxy of GaN rods is investigated.
Already a small amount of Si strongly enhances the vertical growth of GaN. Reactive ion …

The use of etched nanorods from a planar template as a growth scaffold for a highly regular
GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar …

Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a
patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a …

We demonstrate the growth of ordered arrays of nonpolar {10 ̄ 1 0\} 10 1¯ 0 core–shell
nanowalls and semipolar {10 ̄ 1 1\} 10 1¯ 1 core–shell pyramidal nanostripes on c-plane …

Controlling the long-range homogeneity of core–shell InGaN/GaN layers is essential for their
use in light-emitting devices. This paper demonstrates variations in optical emission energy …

The growth and fabrication of GaN nanorod (NR) light-emitting diode (LED) arrays have
attracted much attention because of their advantages of higher crystal quality, larger …