Microdisk lasers feature low-loss, high-quality whispering gallery modes,, that offer the
potential for ultralow-threshold lasing,,, that is not limited by challenges in mirror fabrication …

We report on the investigation of an electrically biased high efficiency green III-nitride light-
emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron …

Photoluminescence measurements on high-quality (In, Ga) N quantum wells reveal that
carriers diffuse laterally to long distances at room temperature, up to tens of microns. This …

The authors have studied In x Ga 1− x N∕ Ga N (x≈ 15%) quantum wells (QWs) using
atomic force microscopy (AFM) and picosecond time resolved cathodoluminescence …

A multimode scanning near-field optical microscopy technique that allows the mapping of
surface morphology, photoluminescence (PL) spectra in illumination and illumination …

Lateral ambipolar diffusion in an InGaN/GaN single quantum well (SQW) structure grown on
bulk GaN is studied by microphotoluminescence (μPL) investigations. The analysis is done …

In this work the photovoltaic properties of In x Ga 1− x N/SnS and Al x Ga 1− x N/SnS
heterojunction solar cells are studied by numerical analysis. The photovoltaic performances …

In this work, key properties of In x Ga 1-x N tandem solar cells (SCs)(single junction, double
junctions and triple junctions) were simulated by employing AMPS-1D software, including IV …

Abstract The InGaN/GaN Schottky solar cell was numerically investigated under AM1. 5
illuminations using Silvaco-Atlas software to reach high efficiencies. According to the …

Time-of-flight experiments were performed to investigate charge carrier diffusion in InGaN
quantum wells. A mere optical setup with high spatial resolution was established on the …