GaAs (0 0 1) has been one of the most intensively studied surfaces for the past 30 years due
both to its importance as a substrate for epitaxial growth and to the challenge its phase …

In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …

InAs was grown by molecular-beam epitaxy onto GaAs (001) until quantum dots (QDs)
formed. At this point, the growth was interrupted and the uncovered QDs were investigated …

Scanning tunneling spectroscopy is used to investigate the single-electron states and the
corresponding squared wave functions of single and freestanding strain-induced InAs …

The model systems for self-organized quantum dots formed from elemental and compound
semiconductors, namely Ge grown on Si (001) and InAs on GaAs (001), are comparatively …

In recent years, the self-assembled growth of semiconductor nanostructures, that show
quantum size effects, has been of considerable interest. Laser devices operating with self …

We study the energetics of island formation in Stranski-Krastanow growth of highly
mismatched heteroepitaxy within a parameter-free approach. It is shown that the (frequently …

For heteroepitaxial growth of InAs islands on GaAs (001), a transition of shapes is observed
experimentally by scanning-tunneling microscopy and analyzed theoretically in terms of the …

We investigate the far infrared magneto-optical transitions in self-assembled InAs quantum
dots with different lateral diameters and we show that a purely electronic model is unable to …

We examine two derivations of the Shuttleworth equation (which is a relation between
surface stress g, surface tension γ, and surface strain), and identify the flaws we perceive …