Architecture and process integration overview of 3D NAND flash technologies

GH Lee, S Hwang, J Yu, H Kim - Applied Sciences, 2021 - mdpi.com
In the past few decades, NAND flash memory has been one of the most successful
nonvolatile storage technologies, and it is commonly used in electronic devices because of …

Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing

J Park, Y Jang, J Lee, S An, J Mok… - Advanced Electronic …, 2023 - Wiley Online Library
Brain‐inspired neuromorphic computing has drawn significant attraction as a promising
technology beyond von Neumann architecture by using the parallel structure of synapses …

Mimicry of excitatory and inhibitory artificial neuron with leaky integrate-and-fire function by a single MOSFET

JK Han, M Seo, WK Kim, MS Kim… - IEEE Electron …, 2019 - ieeexplore.ieee.org
For the first time, a leaky integrate-and-fire (LIF) neuron with both excitatory and inhibitory
characteristics is demonstrated using a single MOSFET. No additional circuits such as …

Multibit, Lead‐Free Cs2SnI6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application

A Kumar, M Krishnaiah, J Park, D Mishra… - Advanced Functional …, 2024 - Wiley Online Library
In the realm of neuromorphic computing, integrating Binary Neural Networks (BNN) with non‐
volatile memory based on emerging materials can be a promising avenue for introducing …

Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

TH Kim, H Nili, MH Kim, KK Min, BG Park… - Applied Physics …, 2020 - pubs.aip.org
In this Letter, we present reset-voltage-dependent precise tuning operation of TiO x/Al 2 O 3-
based memristive devices. For the high resistance state (HRS) with high reset voltage …

On-chip training spiking neural networks using approximated backpropagation with analog synaptic devices

D Kwon, S Lim, JH Bae, ST Lee, H Kim… - Frontiers in …, 2020 - frontiersin.org
Hardware-based spiking neural networks (SNNs) inspired by a biological nervous system
are regarded as an innovative computing system with very low power consumption and …

Synaptic Characteristics and Neuromorphic Computing Enabled by Oxygen Vacancy Migration Based on Porous In2O3 Electrolyte-Gated Transistors

C Liu, X Shen, S Fan, T Xu, J Zhang… - ACS Applied Electronic …, 2023 - ACS Publications
The migration of oxygen vacancies is decisively affecting the modulation of channel
conductance. However, for electrolyte-gated transistors (EGTs), the modulation of channel …

Influence of Al2O3 layer on InGaZnO memristor crossbar array for neuromorphic applications

WS Choi, JT Jang, D Kim, TJ Yang, C Kim, H Kim… - Chaos, Solitons & …, 2022 - Elsevier
In this study, we studied the effect of Al 2 O 3 layer insertion on InGaZnO (IGZO) memristors
by fabricating two kinds of crossbar arrays according to the presence or absence of the Al 2 …

Digital and analog switching characteristics of InGaZnO memristor depending on top electrode material for neuromorphic system

JT Jang, J Min, Y Hwang, SJ Choi, DM Kim… - IEEE …, 2020 - ieeexplore.ieee.org
In this study, we demonstrate both of digital and analog memory operations in InGaZnO
(IGZO) memristor devices by controlling the electrode materials for neuromorphic …

Effect of the gate dielectric layer of flexible InGaZnO synaptic thin-film transistors on learning behavior

S Park, JT Jang, Y Hwang, H Lee… - ACS Applied …, 2021 - ACS Publications
In this work, flexible InGaZnO (IGZO) synaptic thin-film transistors (TFTs) with different gate
dielectric layers are fabricated and analyzed to investigate the effect of the gate insulator of …