Enhanced Synaptic Characteristics under Applied Magnetic Field in V2O5/NiMnIn-Based Switching Device for Neuromorphic Computing
K Kaushlendra, D Kaur - ACS Applied Electronic Materials, 2023 - ACS Publications
The present study reports a memory structure Al/V2O5/NiMnIn on a flexible stainless steel
(SS) substrate for neuromorphic applications. The fabricated device exhibits gradual SET …
(SS) substrate for neuromorphic applications. The fabricated device exhibits gradual SET …
[HTML][HTML] Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study
As the demand for computing applications capable of processing large datasets increases,
there is a growing need for new in-memory computing technologies. Oxide-based resistive …
there is a growing need for new in-memory computing technologies. Oxide-based resistive …
High-performance Ta2O5-based resistive random-access memory with embedded graphene quantum dots and Pt–Ag composite active layer
R Wang, K Chang, X Zhao, X Yu, S Ma, Z Zhao… - Applied Physics …, 2023 - pubs.aip.org
Resistive random-access memory (RRAM) has garnered significant interest in developing
nonvolatile memory systems due to its ability to provide external field tunable resistive states …
nonvolatile memory systems due to its ability to provide external field tunable resistive states …
Resistive switching acceleration induced by thermal confinement
A Sarantopoulos, K Lange, F Rivadulla… - Advanced Electronic …, 2024 - Wiley Online Library
Enhancing the switching speed of oxide‐based memristive devices at a low voltage level is
crucial for their use as non‐volatile memory and their integration into emerging computing …
crucial for their use as non‐volatile memory and their integration into emerging computing …