In the present article, we give a review of modern data and latest achievements pertaining to
the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a …

The HfO 2–Si valence and conduction band offsets (VBO and CBO, respectively) of
technologically relevant HfO 2/SiO 2/Si film stacks have been measured by several methods …

We reviewed studies reporting the applications of the Tauc–Lorentz (TL) parameterization
for the complex dielectric function in spectroscopic ellipsometry. Since this model became …

With the replacement of SiO 2 by high-k Hf-based dielectrics in complementary metal–oxide–
semiconductor technology, the measurement of the high-k oxide bandgap is a high priority …

The origin of a blue luminescence band at 2.7 eV and a luminescence excitation band at 5.2
eV of hafnia has been studied in stoichiometric and non-stoichiometric hafnium oxide films …

With the rapid development of semiconductors, today's optical lithography is approaching its
physical limits, and thus alternative patterning technology is urgently needed. Extreme …

HfO2 thin films are extensively applied in optical coatings and microelectronic devices.
However, film defects, which are vital to the performance of the thin films, are still under …

Thermal oxidation effects on the structural, compositional, and optical properties of erbium
films deposited on silicon via electron beam evaporation were analyzed by x-ray diffraction …

Hafnium oxide (HfO2) has attracted much interest as high-k material of choice for gate oxide
replacement in future CMOS technologies and for its use in optical coating technology. The …

The amazing ferroelectricity observed in Hafnium oxide (HfO2) thin films is due to the
existence of non-centrosymmetric orthorhombic Pca2 1 phase. In this study, the structural …