Low-loss heterogeneous integrations with high output power radar applications at W-band

X Yang, YS Huang, L Zhou, Z Zhao… - IEEE Journal of Solid …, 2021 - ieeexplore.ieee.org
This study presents a design of a 94-GHz high-performance and highly compact frequency-
modulated continuous-wave radar sensor. In this sensor, an-band CMOS-based all-digital …

Silicon interposer package for MMIC heterogeneous integration based on gold/solder ball flip-chip technique

Y Shi, D Shao, W Feng, J Zhang… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Novel silicon interposer package solution is proposed for monolithic microwave integrated
circuit (MMIC) heterogeneous integration. The GaAs/InP MMICs are integrated into the high …

Interconnects in a Multi-Layer Polymer-on-Si 50-GHz Packaging Technology

S Mvokany, J Molles, Z Popović - 2023 16th International …, 2023 - ieeexplore.ieee.org
Heterogeneous integration allows the use of multiple RF technologies within the same
packaging process. Interconnects are required to transition between different embedded …

SiC and GaN Power Devices

K Zekentes, V Veliadis, SH Ryu, K Vasilevskiy… - More-than-Moore …, 2023 - Springer
In an increasingly electrified, technology-driven world, power electronics is central to the
entire clean energy manufacturing economy. Power switching semiconductor devices are …

Design of a Ka-band receiver front end using Si-based system in package

H Zhu, J Li, Q Wang, L Cao - IEICE Electronics Express, 2021 - jstage.jst.go.jp
This letter presents a Ka-band receiver front end in the form of system in package using
silicon substrate. The front end adopts a dualchannel superheterodyne structure, two GaAs …

[HTML][HTML] Конструктивные подходы к интеграции приборов на основе разных полупроводниковых технологий в микроэлектронике СВЧ

АС Ефимов - Известия высших учебных заведений России …, 2023 - cyberleninka.ru
Введение. Достижение высоких характеристик радиоэлектронной системы требует
применения комбинации приборов, реализованных на разных полупроводниковых …

A S-band 3D surface mount packaged SiGe and GaN Tx module using flip-chip bonding and a device embedded PCB substrate

K Kawasaki, E Kuwata, H Ishibashi… - 2018 13th European …, 2018 - ieeexplore.ieee.org
This paper demonstrates a S-band 3D surface mount packaged Si and GaN Tx Module
using flip-chip bonding and a chip embedded PCB Substrate. In order to integrate …

All-in-one wafer-level solution for mmic automatic testing

X Ding, Z Wang, J Liu, M Zhou, W Chen, H Chen, J Mo… - Electronics, 2018 - mdpi.com
In this paper, we present an all-in-one wafer-level solution for MMIC (monolithic microwave
integrated circuit) automatic testing. The OSL (open short load) two tier de-embedding, the …

SiGe-GaN Tx module using Chip Embedded Substrate in S-band

K Kawasaki, E Kuwata, T Yao, K Maeda… - … on Radio-Frequency …, 2020 - ieeexplore.ieee.org
This paper describes small size 3D structure SiGe-GaN Tx module using chip embedded
substrate. In order to achieve small package size of the Tx module, the GaN device is …

A broadband (10–20 GHz) lightweight receive module on multilayer LCP technology for radar applications

MT Craton, V Gjokaj, C Oakley, B Wright… - 2018 IEEE Radar …, 2018 - ieeexplore.ieee.org
A broad-band single substrate module receiver is built on multi-layer flexible substrate. The
module consists of a Vivaldi antenna array, power combiner, and multilayer filter. The …