[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …
behavior in several binary oxide thin film systems. Among the various RS materials and …
Graphene and related materials for resistive random access memories
F Hui, E Grustan‐Gutierrez, S Long… - Advanced Electronic …, 2017 - Wiley Online Library
Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …
resistive random access memories (RRAMs). Here, this emerging field is analyzed …
Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Metal oxide resistive switching memory: materials, properties and switching mechanisms
With the continuously changing landscape of the computer technologies, a new memory
type is needed that will be fast, energy efficient and long-lasting. It shall combine the speed …
type is needed that will be fast, energy efficient and long-lasting. It shall combine the speed …
A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories
A one-bit cell of a general nonvolatile memory consists of a memory element and a switch
element. Several memory elements have been tried given that any bistable states, that is …
element. Several memory elements have been tried given that any bistable states, that is …
NiO resistive random access memory nanocapacitor array on graphene
In this study, a NiO RRAM nanocapacitor array was fabricated on a graphene sheet, which
was on a Nb-doped SrTiO3 substrate containing terraces with a regular interval of about 100 …
was on a Nb-doped SrTiO3 substrate containing terraces with a regular interval of about 100 …
Spectral properties of the dynamic state transition in metal halide perovskite-based memristor exhibiting negative capacitance
The evolution of device properties in memristor switching between high-and low-resistance
states is critical for applications and is still highly subjected to significant ambiguity. Here, we …
states is critical for applications and is still highly subjected to significant ambiguity. Here, we …
Improvement of resistive memory switching in NiO using IrO2
For the development of resistive memory devices using NiO, improvements of several
memory switching properties are required. In NiO memory cells with noble metal electrodes …
memory switching properties are required. In NiO memory cells with noble metal electrodes …
Effects of metal electrodes on the resistive memory switching property of NiO thin films
The effects of various metal electrodes on the resistive switching of NiO thin films were
investigated. Contrary to the belief that Pt is used for its high work function, which enables …
investigated. Contrary to the belief that Pt is used for its high work function, which enables …