▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

We review results on the optical injection of dual state InAs quantum dot-based
semiconductor lasers. The two states in question are the so-called ground state and first …

This work presents a theory of optical signal amplification and processing by quantum-dot
semiconductor optical amplifiers (SOA's) based on the density matrix equations to treat …

Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers
are explained by a comprehensive numerical model. The QD excited state carriers are found …

Passive mode locking was achieved at 1.3 μm in oxide-confined, two-section, bistable
quantum dot (QD) lasers with an integrated intracavity QD saturable absorber. Fully mode …

This paper presents a theory and simulation of quantum-dot semiconductor optical
amplifiers (SOAs) for high-bit-rate optical signal processing. The theory includes spatial …

The influence of p-type modulation doping on self-organized quantum-dot lasers is studied
using a quasiequilibrium model that includes the multi-discrete energy levels and the energy …

We have performed pump-probe differential transmission spectroscopy (DTS)
measurements on In/sub 0.4/Ga/sub 0.6/As-GaAs-AlGaAs heterostructures, which show that …

We propose a genuinely temperature-insensitive quantum dot (QD) laser. Our approach is
based on direct injection of carriers into the QDs, resulting in a strong depletion of minority …

The performance of an ultrafast all-optical logic gate based on quantum-dot semiconductor
optical amplifier (QD-SOA) has been theoretically analyzed in this paper. We introduce a …