An Eight-Channels 0.13- -CMOS Front End for ATLAS Muon-Drift-Tubes Detectors
M De Matteis, F Resta, R Richter, H Kroha… - IEEE Sensors …, 2017 - ieeexplore.ieee.org
An eight-channel readout front end for Large Hadron Collider (LHC) ATLAS muon-drift-tubes
detectors is hereby presented (defined 8× AFE). The system is composed by the cascade of …
detectors is hereby presented (defined 8× AFE). The system is composed by the cascade of …
A PVT power immune compact 65 nm CMOS CSP design with a leakage current compensation feedback for CdZnTe/CdTe sensors dedicated to PET applications
P Yannick Hertz, F Kamdem Jerome… - … journal of circuit …, 2022 - Wiley Online Library
Power consumption and image resolution are the major concerned while designing modern
readout integrated circuits (ROICs) of Cadmium‐Telluride (CdTe)/Cadmium‐Zinc‐Telluride …
readout integrated circuits (ROICs) of Cadmium‐Telluride (CdTe)/Cadmium‐Zinc‐Telluride …
A 0.3 nV/√ Hz input-referred-noise analog front-end for radiation-induced thermo-acoustic pulses
EA Vallicelli, D Turossi, L Gelmi, A Baù, R Bertoni… - Integration, 2020 - Elsevier
This paper presents the design and the experimental characterization of a complete acoustic
analog front-end (A-AFE) read-out channel for detecting thermo-acoustic pulses induced by …
analog front-end (A-AFE) read-out channel for detecting thermo-acoustic pulses induced by …
An 8.72 µW low-noise and wide bandwidth FEE design for high-throughput pixel-strip (PS) sensors
The front-end electronics (FEE) of the Compact Muon Solenoid (CMS) is needed very low
power consumption and higher readout bandwidth to match the low power requirement of its …
power consumption and higher readout bandwidth to match the low power requirement of its …
A 0.35 µm low-noise stable charge sensitive amplifier for silicon detectors applications
The Charge Sensitive Amplifier (CSA) is the key module of the front-end electronics of
various types of Silicon detectors and most radiation detection systems. High gain, stability …
various types of Silicon detectors and most radiation detection systems. High gain, stability …
1-GRad-TID effects in 28-nm device study for rad-hard analog design
This paper reviews the main results of a complete electrical characterization of analog
integrated circuits in 28 nm CMOS overexposed to severe radiation doses (up to 1 GRad …
integrated circuits in 28 nm CMOS overexposed to severe radiation doses (up to 1 GRad …
A 12dBm IIP3 reconfigurable mixer for high/low band IR-UWB receivers
This paper presents a highly linear low power fully differential downconversion mixer for
impulse radio ultra wideband (IR-UWB) receivers. The downconversion mixer is designed …
impulse radio ultra wideband (IR-UWB) receivers. The downconversion mixer is designed …
A low-power CMOS 0.13 µm Charge-Sensitive Preamplifier for GEM detectors
A Pezzotta, A Costantini, M De Matteis… - Proceedings of 2013 …, 2013 - ieeexplore.ieee.org
In this paper a Charge-Sensitive Preamplifier (CSP) for GEM (Gas Electron Multiplier)
detectors readout is presented. The CSP is responsible for signal acquisition and the …
detectors readout is presented. The CSP is responsible for signal acquisition and the …
A CMOS 0.13 µm low power front-end for GEM detectors
A Costantini, A Pezzotta, A Baschirotto… - 2012 19th IEEE …, 2012 - ieeexplore.ieee.org
A low power front-end for GEM (Gas Electron Multiplier) detectors has been developed in
0.13 µm CMOS node. The front-end sensitivity is 0.5 mV/fC which remains almost …
0.13 µm CMOS node. The front-end sensitivity is 0.5 mV/fC which remains almost …
A 28 nm Bulk-CMOS Analog Front-End for High-Rate ATLAS Muon Drift-Tube Detectors
A Pipino, F Resta, L Mangiagalli, M De Matteis… - Sensors, 2019 - mdpi.com
This paper presents the design and experimental characterization of a 28 nm
Complementary Metal Oxide Semiconductor (CMOS) Analog Front-End (AFE) for fast …
Complementary Metal Oxide Semiconductor (CMOS) Analog Front-End (AFE) for fast …