Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …
device roadmap to further improve future performance increases of integrated circuits is …
[HTML][HTML] Metal-induced layer exchange of group IV materials
K Toko, T Suemasu - Journal of Physics D: Applied Physics, 2020 - iopscience.iop.org
Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor
layers exchange during heat treatment. A great deal of effort has been put into research on …
layers exchange during heat treatment. A great deal of effort has been put into research on …
The electronic band structure of Ge1− xSnx in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect
MP Polak, P Scharoch… - Journal of Physics D …, 2017 - iopscience.iop.org
A comprehensive and detailed study of the composition dependence of lattice constants,
band gaps and band offsets has been performed for bulk Ge 1− x Sn x alloy in the full …
band gaps and band offsets has been performed for bulk Ge 1− x Sn x alloy in the full …
Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width
We demonstrate Ge0. 95Sn0. 05 p-channel gate-all-around field-effect transistors (p-
GAAFETs) with sub-3 nm nanowire width (W NW) on a GeSn-on-insulator (GeSnOI) …
GAAFETs) with sub-3 nm nanowire width (W NW) on a GeSn-on-insulator (GeSnOI) …
[HTML][HTML] Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors
Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide
thin films with nanoscale thickness control. Most successful industrial applications have …
thin films with nanoscale thickness control. Most successful industrial applications have …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding
We propose the Ge CMOS photonics platform with Ge-on-Insulator (GOI) substrate on which
Ge mid-infrared photonic devices and Ge CMOS transistors can be monolithically integrated …
Ge mid-infrared photonic devices and Ge CMOS transistors can be monolithically integrated …
[HTML][HTML] Fabrication and integration of photonic devices for phase-change memory and neuromorphic computing
W Zhou, X Shen, X Yang, J Wang… - International Journal of …, 2024 - iopscience.iop.org
In the past decade, there has been tremendous progress in integrating chalcogenide phase-
change materials (PCMs) on the silicon photonic platform for non-volatile memory to …
change materials (PCMs) on the silicon photonic platform for non-volatile memory to …
[HTML][HTML] Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications
The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential
high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by …
high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by …