Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power
electronics due to their superior electrical energy efficiencies and improved power densities …

In the rapidly evolving era of information and intelligence, microelectronic devices are
pivotal across various fields, such as mobile devices, big data computing, electric vehicles …

This work provides a comprehensive investigation of nitrogen and aluminum doping and its
consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial …

We report a comprehensive investigation on stacking faults (SFs) in the 3C-SiC cross-
section epilayer. 3C-SiC growth was performed in a horizontal hot-wall chemical vapour …

One setback that hinders the breakthrough of cubic silicon carbide is the lack of suitable
seeding material for sublimation growth methods such as PVT. We present the growth of …

A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage
bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and …

Sublimation growth of cubic silicon carbide (3C–SiC) with diameters of 50 and 100 mm was
performed on freestanding homoepitaxial grown seeds. For both seeds and sublimation …

In the rapidly evolving era of information and intelligence, microelectronic devices are
pivotal across various fields, such as mobile devices, big data computing, electric vehicles …