Higher-order glass-transition singularities in colloidal systems with attractive interactions

K Dawson, G Foffi, M Fuchs, W Götze, F Sciortino… - Physical Review E, 2000 - APS
The transition from a liquid to a glass in colloidal suspensions of particles interacting through
a hard core plus an attractive square-well potential is studied within the mode-coupling …

Impact of carrier nonpinning effect on thermal power saturation in GaAs-based high power diode lasers

T Kaul, G Erbert, A Klehr, A Maaßdorf… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
A root-cause analysis of thermal power saturation in broad area diode lasers is presented.
Thermal power saturation limits in largest parts the optical power in continuous wave (CW) …

Theory of direct and indirect effect of two-photon absorption on nonlinear optical losses in high power semiconductor lasers

EA Avrutin, BS Ryvkin - Semiconductor science and technology, 2016 - iopscience.iop.org
The effect of the transverse laser structure on two-photon absorption (TPA) related effects in
high-power diode lasers is analysed theoretically. The direct effect of TPA is found to …

Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs

T Kaul, G Erbert, A Maaßdorf, S Knigge… - Semiconductor …, 2018 - iopscience.iop.org
Broad area lasers with novel extreme double asymmetric structure (EDAS) vertical designs
featuring increased optical confinement in the quantum well, Γ, are shown to have improved …

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

M Winterfeldt, P Crump, H Wenzel, G Erbert… - Journal of Applied …, 2014 - pubs.aip.org
GaAs-based broad-area diode lasers are needed with improved lateral beam parameter
product (BPP lat) at high power. An experimental study of the factors limiting BPP lat is …

High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm

Y Liu, G Yang, Z Wang, T Li, S Tang, Y Zhao… - Optics & Laser …, 2021 - Elsevier
Broad-area diode lasers with high output power and low lateral divergence angle are highly
desired for extensive scientific and industrial applications. Here, we report on the epitaxial …

Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions

H Wenzel, A Maaßdorf, C Zink, D Martin… - Electronics …, 2021 - Wiley Online Library
A multi‐active‐region bipolar‐cascade edge‐emitting laser emitting at nearly 900 nm is
presented. The three active regions and two tunnel junctions located in a single waveguide …

Transverse single-mode edge-emitting lasers based on coupled waveguides

NY Gordeev, AS Payusov, YM Shernyakov… - Optics Letters, 2015 - opg.optica.org
We report on the transverse single-mode emission from InGaAs/GaAs quantum well edge-
emitting lasers with broadened waveguide. The lasers are based on coupled large optical …

808 nm broad-area laser diodes designed for high efficiency at high-temperature operation

Y Lan, G Yang, Y Liu, Y Zhao, Z Wang… - Semiconductor …, 2021 - iopscience.iop.org
Semiconductor lasers with high power conversion efficiency (PCE) and output power are
heavily investigated driven by more energy-efficient commercial applications. In this paper …

Temperature evolution of two-state lasing in microdisk lasers with InAs/InGaAs quantum dots

I Makhov, K Ivanov, E Moiseev, N Fominykh… - Nanomaterials, 2023 - mdpi.com
One-state and two-state lasing is investigated experimentally and through numerical
simulation as a function of temperature in microdisk lasers with Stranski–Krastanow …