Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …

Due to its unique physical, chemical, and mechanical properties, such as a low specific
density, large specific surface area, excellent thermal stability, oxidation resistance, low …

Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of~
5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high …

ABSTRACT Two-dimensional (2D) hexagonal boron nitride (h-BN) is one of the most
promising materials for many technological applications ranging from optics to electronics. In …

Electron-phonon interactions are key to understanding the dynamics of electrons in
materials and can be modeled accurately from first principles. However, when electrons and …

The sp2-bonded layered compound boron nitride (BN) exists in more than a handful of
different polytypes (ie, different layer stacking sequences) with similar formation energies …

The presence of metastable Bernal stacking boron nitride is verified by combining second
harmonic generation (SHG) and photoluminescence (PL) spectroscopy. The scanning …

Calculations combining first-principles electron-phonon (e-ph) interactions with the
Boltzmann equation enable studies of ultrafast carrier and phonon dynamics. However, in …

We present an ab initio method to calculate phonon-assisted absorption and emission
spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal …

Stacking two dimensional tunneling heterostructures has always been an important strategy
to improve the optoelectronic device performance. However, there are still many disputes …