Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …

Resistive-switching-based memory devices meet most of the requirements for use in next-
generation information and communication technology applications, including standalone …

A combinatorial screening approach has been designed for identification of Hf-Ta anodic
memristors with enhanced properties. Three distinct compositional zones with similar …

The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically
modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different …

Anodization of transition metals, particularly the valve metals (V, W, Ti, Ta, Hf, Nb, and Zr)
and their alloys, has emerged as a powerful tool for controlling the morphology, purity, and …

There has been growing interest in the use of the sol-gel approach to form high-quality
dielectric materials. Their tailored properties allow for developing functional electronic …

Owing to the advantages of simple structure, low power consumption and high-density
integration, memristors or memristive devices are attracting increasing attention in the fields …

The term memristor, derived from the words memory and resistor, refers to a memristor's
desirable ability to remember its history. The memristor was the fourth fundamental passive …

Inorganic metal oxide based transparent devices that can be solution processed have
demonstrated impressive results in the last decade2 5. The synthesis of metal oxides via …

Solution-processed thin-film transistors (TFTs) have a high potential to be the key
components of future portable, battery-powered devices and circuits. TFTs can be realised in …