Tailoring interfaces is a powerful way of reducing the accumulation of radiation defects.
Understanding strain evolution induced by ion bombardment in nuclear materials with high …

The microstructural phenomena occurring in 6H–SiC subjected to different irradiation
conditions and annealing temperatures were investigated to assess the suitability of 6H–SiC …

The microstructure evolution of hydrogen-implanted 6H-SiC at different temperatures and
fluences is investigated by using various experimental techniques. In H-implanted samples …

Silicon-based thin films and nanostructures are of paramount importance in a wide range of
applications, including microelectronics, photovoltaics, large area sensors, and biomedicine …

Microstructure of radiation-induced Iron phases were investigated in a 6H-SiC subjected to
Iron and Helium bombardment with a damage level of 8 dpa. The microstructural evolution …

SiC is considered a perspective material in advanced nuclear systems as well as for
electronic or spintronic applications, which require an ion implantation process. In this …

Blistering phenomenon by H implantation into 6H-SiC and high-temperature annealing is
only possible in a surprisingly narrow window of ion fluence. By combining experimental …

Sputtering of silicon in a Helium magnetron discharge has been reported as a bottom-up
procedure to obtain amorphous Si films containing high amounts of gas-filled nanopores …

The blistering efficiency in He-H-ions co-implanted and annealed InP has been found to
peak and vanish in a narrow range of ion fluence ratio (Φ H/Φ He= 1. 5–3. 5) with a fixed He …

Lithium niobate (LiNbO _3, LN) channel and ridge waveguides have been successfully
fabricated by He ion implantation, which has energy of 500 keV and fluence of 1.5× 10 …