On the principle operation of tunneling injection quantum dot lasers
I Khanonkin, S Bauer, V Mikhelashvili, O Eyal… - Progress in Quantum …, 2022 - Elsevier
The concept of tunneling injection was introduced in the 1990's to improve the dynamical
properties of semiconductor lasers by avoiding the problem of hot carrier injection which …
properties of semiconductor lasers by avoiding the problem of hot carrier injection which …
Large linewidth reduction in semiconductor lasers based on atom-like gain material
With a new generation of quantum dot (QD) optical gain material comprising atom-like
features, the fundamental spectral characteristics of laser emission have been improved …
features, the fundamental spectral characteristics of laser emission have been improved …
1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range
T Sadeev, D Arsenijević, D Franke, J Kreissl… - Applied Physics …, 2015 - pubs.aip.org
Passive mode-locking of two-section quantum-dot mode-locked lasers grown by
metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide …
metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide …
Group velocity dispersion in high-performance BH InAs/InP QD and InGaAsP/InP QW two-section passively mode-locked lasers
High-performance buried heterostructure (BH) C-band InAs/InP quantum dot (QD) and L-
band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) are …
band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) are …
Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures
O Eyal, A Willinger, S Banyoudeh, F Schanbel… - Optics …, 2017 - opg.optica.org
We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm
wavelength range operating over a wide temperature range of 25 to 100° C. A temperature …
wavelength range operating over a wide temperature range of 25 to 100° C. A temperature …
Dynamic characteristics of 20‐layer stacked QD‐SOA with strain compensation technique by ultrafast signals using optical frequency comb
A Matsumoto, K Akahane, T Sakamoto… - … status solidi (a), 2017 - Wiley Online Library
In this article, we evaluated the static and dynamic characteristics of 20‐layer stacked
quantum dot semiconductor optical amplifiers (QD‐SOAs) grown on an InP (311) B substrate …
quantum dot semiconductor optical amplifiers (QD‐SOAs) grown on an InP (311) B substrate …
Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm
This work reports on non-degenerate four-wave mixing under dual-mode injection in
metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry …
metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry …
Nonlinear pulse propagation in InAs/InP quantum dot optical amplifiers: Rabi oscillations in the presence of nonresonant nonlinearities
We study the interplay between coherent light-matter interactions and nonresonant pulse
propagation effects when ultrashort pulses propagate in room-temperature quantum dot …
propagation effects when ultrashort pulses propagate in room-temperature quantum dot …
Coherent control in quantum dot gain media using shaped pulses: a numerical study
We present a numerical study of coherent control in a room temperature InAs/InP quantum
dot (QD) semiconductor optical amplifier (SOA) using shaped ultra-short pulses. Both the …
dot (QD) semiconductor optical amplifier (SOA) using shaped ultra-short pulses. Both the …
[HTML][HTML] Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots
The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD)
semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast …
semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast …