Nanoscaled metal borides and phosphides: recent developments and perspectives

S Carenco, D Portehault, C Boissiere… - Chemical …, 2013 - ACS Publications
The quest for nanoscaling has extended beyond traditional metal oxides (1-4) and metal
(0),(5) as exemplified by the huge development of “quantum dots” chalcogenide …

Synthesis, structure, and optoelectronic properties of II–IV–V 2 materials

AD Martinez, AN Fioretti, ES Toberer… - Journal of Materials …, 2017 - pubs.rsc.org
II–IV–V2 materials offer the promise of enhanced functionality in optoelectronic devices due
to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic …

Dye-sensitized photocathodes: efficient light-stimulated hole injection into p-GaP under depletion conditions

M Chitambar, Z Wang, Y Liu, A Rockett… - Journal of the …, 2012 - ACS Publications
The steady-state photoelectrochemical responses of p-GaP photoelectrodes immersed in
aqueous electrolytes and sensitized separately by six triphenylmethane dyes (rose bengal …

Urchin-like Ni x P y hollow superstructures: Mild solvothermal synthesis and enhanced catalytic performance for the reduction of 4-nitrophenol

J Wei, Y Ni, N Xiang, Y Zhang, X Ma - CrystEngComm, 2014 - pubs.rsc.org
In this paper, a two-step solution process was designed for the preparation of urchin-like
NixPy hollow superstructures with enhanced catalytic performance for the reduction of 4 …

Profiling photoinduced carrier generation in semiconductor microwire arrays via photoelectrochemical metal deposition

M Dasog, AI Carim, S Yalamanchili, HA Atwater… - Nano Letters, 2016 - ACS Publications
Au was photoelectrochemically deposited onto cylindrical or tapered p-Si microwires on Si
substrates to profile the photoinduced charge-carrier generation in individual wires in a …

Significant Pressure-Enhanced Photoelectric Properties and Extended Spectral Response Range in Zn-Based Chalcopyrite ZnGeP2

S Fang, Z Li, R Li, X Jing, L Yue, R Liu… - The Journal of …, 2023 - ACS Publications
As a commercial chalcopyrite, the ternary Zn-based semiconductor ZnGeP2 is a promising
material because of its economical and practical applications in photocatalytic, nonlinear …

Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts as photoelectrode materials

S Lee, W Wen, Q Cheek, S Maldonado - Journal of Crystal Growth, 2018 - Elsevier
Gallium phosphide (GaP) nanowire film electrodes have been prepared via solid
sublimation of GaP powder using both gold (Au) and tin (Sn) nanoparticles as the vapor …

Wet chemical functionalization of GaP (111) B through a Williamson ether-type reaction

ES Brown, SL Peczonczyk… - The Journal of Physical …, 2015 - ACS Publications
Functionalization of crystalline gallium phosphide (GaP)(111) B interfaces has been
performed through the formation of P–O–R surface bonds. The approach described herein …

Synthesis of photoactive ZnSnP2 semiconductor nanowires

S Lee, E Fahrenkrug, S Maldonado - Journal of Materials Research, 2015 - Springer
Single-phase crystalline ZnSnP 2 nanowires have been prepared via simple chemical vapor
deposition method using powdered Zn and SnP 3 as the precursors in a custom-built tube …

Disorder-tunable ZnGeP2 for epitaxial top cells on Si

RR Schnepf, AD Martinez, JS Mangum… - 2019 IEEE 46th …, 2019 - ieeexplore.ieee.org
There has been a longstanding search for top cell materials for Si-based tandems. ZnGeP 2
is one material that could fit this need. It is lattice matched to Si and has the potential for …