[HTML][HTML] Direct and indirect Z-scheme heterostructure-coupled photosystem enabling cooperation of CO2 reduction and H2O oxidation

Y Wang, X Shang, J Shen, Z Zhang, D Wang… - Nature …, 2020 - nature.com
The stoichiometric photocatalytic reaction of CO2 with H2O is one of the great challenges in
photocatalysis. Here, we construct a Cu2O-Pt/SiC/IrOx composite by a controlled …

Visible-Light Driven Overall Conversion of CO2 and H2O to CH4 and O2 on 3D-SiC@2D-MoS2 Heterostructure

Y Wang, Z Zhang, L Zhang, Z Luo, J Shen… - Journal of the …, 2018 - ACS Publications
A marigold-like SiC@ MoS2 nanoflower with a unique Z-scheme structure efficiently
achieves the overall conversion of gas phase CO2 with H2O (CO2 (g)+ 2H2O (g)= CH4+ …

Real-time measurement of temperature sensitive electrical parameters in SiC power MOSFETs

A Griffo, J Wang, K Colombage… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper examines a number of techniques for junction temperature estimation of silicon
carbide (SiC) MOSFET s devices based on the measurement of temperature sensitive …

Wide gap semiconductor microwave devices

VV Buniatyan, VM Aroutiounian - Journal of Physics D: Applied …, 2007 - iopscience.iop.org
Wide gap semiconductor microwave devices - IOPscience Skip to content IOP Science home
Accessibility Help Search Journals Journals list Browse more than 100 science journal titles …

Highly selective photocatalytic reduction of CO2 to CH4 on electron‐rich Fe species cocatalyst under visible light irradiation

Q Lin, J Zhao, P Zhang, S Wang, Y Wang… - Carbon …, 2024 - Wiley Online Library
Efficient photocatalytic reduction of CO2 to high‐calorific‐value CH4, an ideal target product,
is a blueprint for C1 industry relevance and carbon neutrality, but it also faces great …

Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device

M Widmann, M Niethammer, DY Fedyanin… - Nano …, 2019 - ACS Publications
Color centers with long-lived spins are established platforms for quantum sensing and
quantum information applications. Color centers exist in different charge states, each of them …

SiC semiconductor devices technology, modeling and simulation

T Ayalew - 2004 - repositum.tuwien.at
WIDE BANDGAP semiconductor, particularly Silicon Carbide (SiC), based electronic
devices and circuits are presently being developed for use in high-temperature, high-power …

Cryogenic and high temperature performance of 4H-SiC power MOSFETs

S Chen, C Cai, T Wang, Q Guo… - 2013 Twenty-Eighth …, 2013 - ieeexplore.ieee.org
The electrical performance of 4H-SiC Power MOSFETs is studied at temperatures from 93K
to 473K. With the decrease of operation temperature, the threshold voltage is found to …

Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics

J Lee, L Tao, Y Hao, RS Ruoff, D Akinwande - Applied physics letters, 2012 - pubs.aip.org
A high-mobility graphene field-effect transistor with embedded gate was fabricated on
smooth spin-coated polyimide films. Electrostatic transport measurements reveal a …

Figure of merit of diamond power devices based on accurately estimated impact ionization processes

A Hiraiwa, H Kawarada - Journal of Applied Physics, 2013 - pubs.aip.org
Although a high breakdown voltage or field is considered as a major advantage of diamond,
there has been a large difference in breakdown voltages or fields of diamond devices in …