With transistors scaling down to 3 nm node and beyond, short channel effect (SCE) as well
as power consumption dissipation present immense challenges for further scaling down of …

Gate-all-around (GAA) is a promising MOSFET structure to continue scaling down the size of
CMOS devices beyond 7 nm technology node. This paper gives an overview of different …

In this paper, we propose a novel “Teeth Junctionless Gate All Around Field Effect
Transistor”(TH-JLGAA FET) based on gate engineering method, to obtain finer electrical …

In this work, a junctionless (JL) gate all around (GAA) silicon nanowire field-effect transistor
sensor for the detection of hydrogen (H2) has been carried out. The sensors are designed to …

In this paper, we report the performance of a novel circular double-gate (CDGT) silicon-on-
insulator metal oxide semiconductor field effect transistor (MOSFET). We explore a variety of …

In the present day, metallic oxide semiconductor field-effect transistor-based bio-sensors
have been frequently used for various purposes due to their low cost and other properties. In …

In this manuscript, a numerical model based on the electric field, threshold voltage, sub-
threshold current, and electrostatic potential in cylindrical coordinates using Poisson's …

The radiation effects on a multi-nanosheet tunneling-based field effect transistor (NS-TFET)
were investigated for a 3-nm technology node using a three-dimensional (3D) technology …

In this study, we investigated the impact of random dopant fluctuation (RDF) on junctionless
(JL) fin field-effect transistors (FinFETs) with ferroelectric (FE) negative capacitance (NC) …

As device feature sizes continue to decrease and fin field effect transistors reach their
physical limits, gate all around field effect transistors (GAAFETs) have emerged with larger …