Atomic assembly during ion-beam assisted growth: Kinetic modeling
YV Trushin, DV Kulikov, KL Safonov… - Journal of Applied …, 2008 - pubs.aip.org
The influence of an additional bombardment with low-energy ions during conventional
molecular beam epitaxy deposition is studied. A model is proposed describing the initial …
molecular beam epitaxy deposition is studied. A model is proposed describing the initial …
Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films
DV Kulikov, YV Trushin, VS Kharlamov - Technical Physics Letters, 2010 - Springer
The influence of the energy of bombarding nitrogen ions on the growth of thin gallium nitride
(GaN) films under molecular beam epitaxy (MBE) conditions has been simulated using the …
(GaN) films under molecular beam epitaxy (MBE) conditions has been simulated using the …
КИНЕТИЧЕСКИЕ УРАВНЕНИЯ И РОСТ НАНОКРИСТАЛЛОВ В МЕТОДАХ МОЛЕКУЛЯРНО-ПУЧКОВОЙ ЭПИТАКСИИ
ЮВ Трушин, ДВ Куликов, КЛ Сафонов… - … академии наук. Серия …, 2008 - elibrary.ru
В статье методами компьютерного моделирования исследовались процессы
зарождения и роста нанокластеров GaN, Ge, InAs в процессе молекулярно-пучковой …
зарождения и роста нанокластеров GaN, Ge, InAs в процессе молекулярно-пучковой …
Kinetic equations and nanocrystal growth in molecular beam epitaxy methods
YV Trushin, DV Kulikov, KL Safonov… - Bulletin of the Russian …, 2008 - Springer
The processes of nucleation and growth of GaN, Ge, and InAs nanoclusters in molecular
beam epitaxy (conventional and nitrogen-ion-assisted) have been investigated by computer …
beam epitaxy (conventional and nitrogen-ion-assisted) have been investigated by computer …