We present measurements of mid-infrared light-emitting diodes generating photons above
the conventional limit of 100% electrical-to-optical power conversion efficiency. At low …

Phase equilibria in the In–Al–Ga–P–As system have been analyzed in terms of a simple
solution model. We have calculated the stability limits of InAlGaPAs solid solutions on GaAs …

The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR
(infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures …

Efficiencies of optical pairs consisting of fast low-noise uncooled immersion LEDs and
photodiodes based on InAsSb solid solution are studied. The proposed optical pairs are …

The report presents expected threshold characteristics of photosensors based on uncooled
mid-infrared (2-5 μm) A3B5 photodiodes characterized by a fast response time (tens of ns) …

This paper presents a synthesis from the liquid phase in the field of temperature gradient of
bismuth-containing AlGaInAsP solid solutions. Investigations are made of the effect of …

The surface quality of epitaxial multicomponent layers based on group A 3 B 5 compounds,
which are grown under different conditions via floating-zone refining with a temperature …

Heterophase equilibria in the Ga–In–Sb–As–P–Bi system have been analyzed in terms of a
simple solution model. We have calculated the stability limits of GaInAsSbPBi solid solutions …

InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which
exhibit electroluminescence near 3.7 μ m at room temperature. Radiative recombination …

The effect of bismuth on the structural perfection and the luminescent properties of Al x In y
Ga 1–x–y Bi z Sb 1–z/GaSb heterostructures has been studied. The optimal parameters of …