Study of selective etching of TaN with respect to SiOCH dielectrics using SiF4 plasma processes
TaN is used as a Cu diffusion barrier during metal interconnect formation to enable modern
chip fabrication. In this study, the selective removal of TaN with respect to SiOCH dielectrics …
chip fabrication. In this study, the selective removal of TaN with respect to SiOCH dielectrics …
Reactor wall effects in Si–Cl2–Ar atomic layer etching
This work complements our previous manuscript [J. Vac. Sci. Technol. A 41, 062602 (2023)]
where predictions from molecular dynamics (MD) simulations of silicon–chlorine–argon (Si …
where predictions from molecular dynamics (MD) simulations of silicon–chlorine–argon (Si …