A short review on properties and applications of zinc oxide based thin films and devices: ZnO as a promising material for applications in electronics, optoelectronics …

S Vyas - Johnson Matthey Technology Review, 2020 - ingentaconnect.com
Zinc oxide has emerged as an attractive material for various applications in electronics,
optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at …

UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT: PSS hydrid Schottky diodes

DH Vieira, M da Silva Ozório, GL Nogueira… - Materials Science in …, 2021 - Elsevier
The UV photocurrent response of thin films of wide bandgap semiconductors such as zinc
oxide (ZnO) can be applied to a great number of electronic devices aiming applications in …

Elucidating the effect of etching time key-parameter toward optically and electrically-active silicon nanowires

M Naffeti, PA Postigo, R Chtourou, MA Zaïbi - Nanomaterials, 2020 - mdpi.com
In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity
have been fabricated through a facile, reliable, and cost-effective metal assisted chemical …

In-depth opto-electrical analysis of Ni: CdS film towards the performance as Ag/Ni: CdS/FTO Schottky diode

C Kumar, V Kashyap, M Shrivastav, F Guzman… - Optical Materials, 2023 - Elsevier
Nickel doped cadmium sulfide (Ni: CdS) thin films are deposited onto glass and FTO
substrate using spray pyrolysis technique. The effect of annealing temperature on the thin …

Fabrication, photoresponse and temperature dependence of n-VO2/n-MoSe2 heterojunction diode

A Patel, P Pataniya, GK Solanki, CK Sumesh… - Superlattices and …, 2019 - Elsevier
Transition metal dichalcogenides are being interest in study for their optoelectronic device
applications. This is an upsurge in research efforts after realizing monolayer device …

Electrical properties of Ag/p-Cu2NiSnS4 thin film Schottky diode

PR Ghediya, YM Palan, DP Bhangadiya… - Materials Today …, 2021 - Elsevier
In this paper, we report the electrical properties of ITO/p-Cu 2 NiSnS 4/Ag thin film Schottky
diode fabricated by direct-ink-coating techniques. The Cu 2 NiSnS 4 (CNTS) films were dip …

Effective Richardson Constant of Sol-Gel Derived TiO2 Films in n-TiO2/p-Si Heterojunctions

G Rawat, H Kumar, Y Kumar, C Kumar… - IEEE Electron …, 2017 - ieeexplore.ieee.org
The effective Richardson constant of sol-gel derived TiO 2 thin film has been estimated
possibly for the first time from temperature-dependent current-voltage (IVT) characteristics of …

Comprehensive study on electrical and hydrogen gas sensing characteristics of Pt/ZnO nanocrystalline thin film-based Schottky diodes grown on n-Si substrate using …

L Rajan, C Periasamy, V Sahula - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
This paper presents a comprehensive study on the electrical characteristics of Pt/ZnO thin
film Schottky contacts fabricated on n-Si substrates by RF sputtering, and its application as a …

Optimization, design and size effect on the performance of Ag/CdS: Cu/FTO/glass based Schottky diode

C Kumar, V Kashyap, M Shrivastava, F Guzman… - Materials Letters, 2023 - Elsevier
Influences of annealing on optical properties of spray pyrolysis deposited Cu-doped CdS
(CdS: Cu) thin-films are investigated and designed Ag/CdS: Cu/FTO/glass based Schottky …

Schottky barrier diodes fabricated with metal oxides AgOx/IGZO

LA Santana, LM Reséndiz, AI Díaz… - Microelectronic …, 2020 - Elsevier
In this work, Schottky barrier diodes were fabricated using silver oxide (AgOx) as the
Schottky contact and amorphous indium gallium zinc oxide (a-IGZO) as the n-type …