The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ
ammonia (NH 3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with …

The reduction in the gate leakage current and the improvement in subthreshold
characteristics and current collapse in AlGaN/GaN high-electron-mobility transistors …

We have demonstrated Si implantation incorporation into GaN HEMTs with a non-alloyed
ohmic contact process. We optimized the power density of pulsed laser annealing to activate …

We investigated the effect of treating the surface of n-Al 0.87 Ga 0.13 N: Si by O 2 or SF 6
plasma on the properties of subsequently deposited and annealed V/Al/Ni/Au contacts …

The Fluorine-based dry etching process is extensively employed in the fabrication of GaN-
based High Electron Mobility Transistors. This research activity aims to the identification of …

In this work, the experimental impact of SF 6 plasma treatment on the performance of InP
metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into …

The effects of SF 6 plasma treatment of Al 2 O 3 on InP substrate have been investigated in
this paper. Electrical characteristics including drive current, effective channel mobility …

随着高压开关和高速射频电路的发展, 增强型GaN 基高电子迁移率晶体管(HEMT)
成为该领域内的研究热点. 增强型GaN 基HEMT 只有在加正栅压才有工作电流 …

High electron mobility transistors (HEMTs) based on gallium nitride (GaN) exhibit significant
performance in high-frequency and high-power applications due to unique properties. For …

The effect of fluorine interface redistribution on dc and microwave performances of SF6
plasma-treated AlGaN/GaN high-electron mobility transistors (HEMTs) was investigated …