The non‐volatile polarization of a ferroelectric is a promising candidate for digital memory
applications. Ferroelectric capacitors have been successfully integrated with silicon …

We review and critique the recent developments on multifunctional oxide materials, which
are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this …

Functional oxides are an untapped resource for futuristic devices and functionalities. These
functionalities can range from high temperature superconductivity to multiferroicity and novel …

The detailed science and technology of crystalline oxide film growth using vacuum methods
is reviewed and discussed with an eye toward gaining fundamental insights into the …

SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the
route to the monolithic integration of various complex oxides on the complementary metal …

LaAlO 3/SrTiO 3 interfaces grown by molecular beam epitaxy show a metal-insulator
transition at a critical film thickness of four unit cells of LaAlO 3 on TiO 2-terminated SrTiO 3 …

Functional oxides on silicon have been the subject of in-depth research for more than 20
years. Much of this research has been focused on the quality of the integration of materials …

According to Moore's Law, not only does the number of transistors in an integrated circuit
double every two years, but transistor size also decreases at a predictable rate. At the rate …

Phenomenological models suggest that thin epitaxial SrTiO 3 films on silicon will exhibit
ferroelectric behavior as a result of compressive strain. However, such models do not …

The dielectric and structural properties of LaAlO 3 make it an attractive epitaxial gate oxide
for nanometer-scale field effect transistors. However, the growth of epitaxial LaAlO 3 directly …