As a typical broad bandgap semiconductor, ZnO has received considerable attention for
developing optoelectronic devices in ultraviolet wavelengths, but suffers from a lack of high …

Silicon carbide (SiC) is a rapidly emerging material for photonic applications, thanks to its
exceptional optical properties. To be used as a waveguide, SiC thin films must be deposited …

A self-powered UV sensor with high responsivity was developed by coupling ZnO based
piezoelectric nanogenerator and photodetector for uninterrupted real-time monitoring of UV …

Low-dimensional wide bandgap semiconductors demonstrate great potential in the large-
scale fabrication of new-generation ultraviolet (UV) photodetectors (PDs) with an excellent …

This study examines the electrical and optical properties of p-Si/n-SiC heterojunctions
subjected to UV and visible light in addition to the conduction mechanism of the device. The …

The composite films of metal and SiC have attracted much attention in the fields of
microelectronics, heat conduction, and electromagnetic wave absorption because of their …

Ultraviolet (UV) detectors with high gain at low bias are urgently demanded. In this study, a
GaN-based UV bipolar phototransistor (BPT) with high zero-bias gain was obtained based …

Polycrystalline ZnO thin films having preferential growth along the polar (002) plane are
prepared on Si (111) substrate using RF sputtering technique. A gradual build-up of the …

In this paper, Ga 2 O 3/CH 3 NH 3 PbI 3 photodetector (PD) with high external quantum
efficiency (EQE) was successfully prepared by spin coating CH 3 NH 3 PbI 3 on the film …

In this work we report on the extensive characterization of amorphous silicon carbide (a-SiC)
coatings prepared by physical deposition methods. Our investigation is performed within the …