A review of fingerprint sensors: Mechanism, characteristics, and applications
Y Yu, Q Niu, X Li, J Xue, W Liu, D Lin - Micromachines, 2023 - mdpi.com
Identification technology based on biometrics is a branch of research that employs the
unique individual traits of humans to authenticate identity, which is the most secure method …
unique individual traits of humans to authenticate identity, which is the most secure method …
The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact
The electronic structure of the interface between the boron-doped oxygenated amorphous
silicon “window layer”(a-SiO x: H (B)) and aluminum-doped zinc oxide (ZnO: Al) was …
silicon “window layer”(a-SiO x: H (B)) and aluminum-doped zinc oxide (ZnO: Al) was …
Pronounced surface band bending of thin-film silicon revealed by modeling core levels probed with hard x-rays
D Wippler, RG Wilks, BE Pieters… - … Applied Materials & …, 2016 - ACS Publications
Enhancing the probing depth of photoemission studies by using hard X-rays allows the
investigation of buried interfaces of real-world device structures. However, it also requires …
investigation of buried interfaces of real-world device structures. However, it also requires …
Near‐Surface [Ga]/([In]+[Ga]) Composition in Cu(In,Ga)Se2 Thin‐Film Solar Cell Absorbers: An Overlooked Material Feature
The chemical and electronic structures in the near‐surface region of Cu (In, Ga) Se2 thin‐
film solar cell absorbers are investigated using nondestructive soft and hard X‐ray …
film solar cell absorbers are investigated using nondestructive soft and hard X‐ray …
HAXPES studies of solid materials for applications in energy and information technology using the HIKE facility at HZB-BESSY II
M Gorgoi, N Mårtensson, S Svensson - Journal of Electron Spectroscopy …, 2015 - Elsevier
In the present work we review a number of research directions addressed at the HIKE end-
station at the BESSY II storage ring at the Helmholtz-Zentrum Berlin, HZB, using hard X-ray …
station at the BESSY II storage ring at the Helmholtz-Zentrum Berlin, HZB, using hard X-ray …
Evaluation of ITO/a-Si Interface Fabricated by RPD Technique
T Nishihara, T Kamioka, H Kanai… - 2019 IEEE 46th …, 2019 - ieeexplore.ieee.org
We evaluated the ITO/p-type a-Si interface for Si heterojunction solar cells using XPS and
TEM. It was found that ITO/a-Si interface which is 20 nm from the surface is oxidized by using …
TEM. It was found that ITO/a-Si interface which is 20 nm from the surface is oxidized by using …