Energy and angular distributions of sputtered species from a wide variety of target materials
(metals, semiconductors, alkali halides, frozen gases, and organic solids) are discussed …

The continuous technological development of electronic devices and the introduction of new
materials leads to ever greater demands on the fabrication of semiconductor …

We have investigated the mechanism of secondary ion yield enhancement using Bin+ (n= 1–
6) primary ions and three different samples–dl-phenylalanine, Irganox 1010 and polystyrene …

The continuous technological development of electronic devices and the introduction of new
materials lead to ever greater demands on the fabrication of semiconductor heterostructures …

Molecular dynamics simulations of the sputtering of Si by keV C60 bombardment have been
performed as a function of incident kinetic energy at two incident angles, normal incidence …

We investigate the mechanism of the nonlinear secondary ion yield enhancement using
Aun+ (n= 1, 2, 3, 5, 7) primary ions bombarding thin films of Irganox 1010, DL-phenylalanine …

The hypervelocity impact of electrosprayed nanodroplets on single-crystal silicon ejects a
large number of atoms. Although sputtering by atomic, molecular, and gas cluster ions has …

In recent years, the method of molecular-dynamics computer simulation has increasingly
been employed to investigate the mechanisms underlying sputtering of solids by ion and …

Currently, nano-technology is one of the most active areas of applied academic and
industrial research, documenting the ongoing trend to sub-µm scale technology. In the last …

Cluster ion beams create considerably more damage in silicon and other substrates and
eject more material than single ions that deposit at the same kinetic energy on the substrate …