[HTML][HTML] Quantum confinement in Si and Ge nanostructures: Theory and experiment
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …
Recent progress on Ge/SiGe quantum well optical modulators, detectors, and emitters for optical interconnects
Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
[HTML][HTML] Recent progress in GeSi electro-absorption modulators
P Chaisakul, D Marris-Morini, MS Rouifed… - … and technology of …, 2014 - Taylor & Francis
Electro-absorption from GeSi heterostructures is receiving growing attention as a high
performance optical modulator for short distance optical interconnects. Ge incorporation with …
performance optical modulator for short distance optical interconnects. Ge incorporation with …
Radiative recombination and optical gain spectra in biaxially strained -type germanium
We calculate band-to-band radiative transition rate spectra in pure Ge as functions of
applied tensile strain, heavy doping, charge injection density, and temperature. Direct and …
applied tensile strain, heavy doping, charge injection density, and temperature. Direct and …
Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion
Femtosecond time-resolved pump-probe spectroscopy is used to investigate the ultrafast
carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced …
carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate. Pronounced …
Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures
P Chaisakul, D Marris-Morini, G Isella, D Chrastina… - Optics letters, 2010 - opg.optica.org
We investigate the room-temperature quantum-confined Stark effect in Ge/SiGe multiple
quantum wells (MQWs) grown by low-energy plasma-enhanced chemical vapor deposition …
quantum wells (MQWs) grown by low-energy plasma-enhanced chemical vapor deposition …
Extended density-matrix model applied to silicon-based terahertz quantum cascade lasers
Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over
existing III-V devices. Although coherent electron transport effects are known to be important …
existing III-V devices. Although coherent electron transport effects are known to be important …
Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers
E Gatti, E Grilli, M Guzzi, D Chrastina, G Isella… - Applied physics …, 2011 - pubs.aip.org
We report on the observation of room temperature direct band gap photoluminescence in
compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed …
compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed …
Near-and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells
We report an extensive study of strained Ge/Si 0.2 Ge 0.8 multiquantum wells grown by
ultrahigh-vacuum chemical-vapor deposition. The microstructural properties of the samples …
ultrahigh-vacuum chemical-vapor deposition. The microstructural properties of the samples …
Impact of minority carrier lifetime on the performance of strained germanium light sources
We theoretically investigate the impact of the defect-limited carrier lifetime on the
performance of germanium (Ge) light sources. For Ge LEDs, we show that improving the …
performance of germanium (Ge) light sources. For Ge LEDs, we show that improving the …