Electrostatic discharge (ESD) clamp
CW Hsu - US Patent 9,716,016, 2017 - Google Patents
One or more techniques or systems for forming an electrostatic discharge (ESD) clamp are
provided herein. In some embodiments, the ESD clamp includes a first pad and a second …
provided herein. In some embodiments, the ESD clamp includes a first pad and a second …
Enhanced integration of DMOS and CMOS semiconductor devices
S Xu - US Patent 10,134,641, 2018 - Google Patents
ABSTRACT A method of fabricating a power semiconductor device includes: forming at least
one lateral diffused metal-oxide semiconductor (LDMOS) structure having a first fully sili …
one lateral diffused metal-oxide semiconductor (LDMOS) structure having a first fully sili …
ESD robust MOS device
AC Appaswamy, AA Salman, F Farbiz… - US Patent …, 2017 - Google Patents
A semiconductor device includes a body and a transistor fabricated into the body. Isolation
material at least partially encases the body. Biasing is coupled to the isolation material …
material at least partially encases the body. Biasing is coupled to the isolation material …
Tunable breakdown voltage RF FET devices
V Jain, Q Liu, JJ Pekarik - US Patent 10,038,063, 2018 - Google Patents
A tunable breakdown voltage RF MESFET and/or MOSFET and methods of manufacture are
disclosed. The method includes forming a first line and a second line on an underlying gate …
disclosed. The method includes forming a first line and a second line on an underlying gate …
Semiconductor devices and methods to enhance electrostatic discharge (ESD) robustness, latch-up, and hot carrier immunity
The present disclosure relates to non-planar ESD protection devices. The present disclosure
provides a device structure and method of fabricating the structure that is essentially immune …
provides a device structure and method of fabricating the structure that is essentially immune …
Tunable breakdown voltage RF FET devices
V Jain, Q Liu, JJ Pekarik - US Patent 10,629,692, 2020 - Google Patents
Atunable breakdown voltage RF MESFET and/or MOSFET and methods of manufacture are
disclosed. The method includes forming a first line and a second line on an underlying gate …
disclosed. The method includes forming a first line and a second line on an underlying gate …
Electrostatic discharge (ESD) protection device
YN Jou - US Patent 8,643,111, 2014 - Google Patents
The present invention relates to an electrostatic discharge (ESD) protection device, and in
particular, to an electrostatic discharge (ESD) protection device with the ability to adjust …
particular, to an electrostatic discharge (ESD) protection device with the ability to adjust …
Tunable breakdown voltage RF FET devices
V Jain, Q Liu, JJ Pekarik - US Patent 10,090,391, 2018 - Google Patents
A tunable breakdown voltage RF MESFET and/or MOSFET and methods of manufacture are
disclosed. The method includes forming a first line and a second line on an underlying gate …
disclosed. The method includes forming a first line and a second line on an underlying gate …
Turnable breakdown voltage RF FET devices
V Jain, Q Liu, JJ Pekarik - US Patent 10,109,716, 2018 - Google Patents
A tunable breakdown voltage RF MESFET and/or MOSFET and methods of manufacture are
disclosed. The method includes forming a first line and a second line on an underlying gate …
disclosed. The method includes forming a first line and a second line on an underlying gate …
Tunable breakdown voltage RF FET devices
V Jain, Q Liu, JJ Pekarik - US Patent 10,680,074, 2020 - Google Patents
A tunable breakdown voltage RF MESFET and/or MOSFET and methods of manufacture are
disclosed. The method includes forming a first line and a second line on an underlying gate …
disclosed. The method includes forming a first line and a second line on an underlying gate …