The role of molybdenum trioxide in the change of electrical properties of Cr/MoO3/n-Si heterojunction and electrical characterization of this device depending on …
Z Çaldıran, LB Taşyürek - Sensors and Actuators A: Physical, 2021 - Elsevier
In this study, the molybdenum trioxide as a chemical compound with the formula MoO 3 was
coated between chromium (Cr) metal and n-type semiconductor (n-Si) by thermal …
coated between chromium (Cr) metal and n-type semiconductor (n-Si) by thermal …
Modeling of 1300 nm hybrid III-V/silicon lasers
In this study, the modeling of a III–V-Si hybrid semiconductor laser with an InGaAsP 80 nm
thick active layer at a wavelength of 1300 nm was carried out using the LaserMOD …
thick active layer at a wavelength of 1300 nm was carried out using the LaserMOD …
Calculation of reflectance for double quantum well laser at both minimum dispersion and minimum attenuation spectra
D Arpan - International Journal of Nanoparticles, 2022 - inderscienceonline.com
Double heterojunction laser is one of the better candidates under the umbrella of quantum
well laser owing to its both carrier confinement and mode confinement capabilities. The …
well laser owing to its both carrier confinement and mode confinement capabilities. The …
Design of InSb-based quantum-well laser with emission line at 5.6 μm
S Solgi, S Mirzakuchaki… - The European Physical …, 2021 - epjplus.epj.org
This work reports on the optimization of factors affecting the performance of InSb-based
quantum-well (QW) laser. The QW laser designs and its parameters are improved using …
quantum-well (QW) laser. The QW laser designs and its parameters are improved using …
Defect-free heterogeneous substrates
D Liang - US Patent 11,004,681, 2021 - Google Patents
In example implementations of a heterogeneous substrate, the heterogeneous substrate
includes a first material having an air trench, a second material coupled to the first material …
includes a first material having an air trench, a second material coupled to the first material …